How to Accurately Test and Characterize the Gate Charge (Qg) of SiC Devices

How to Accurately Test and Characterize the Gate Charge (Qg) of SiC Devices

應用說明

The rapid development in the field of new energy has greatly propelled the application of third-generation power semiconductors. Gate charge is one of the crucial dynamic parameters of power semiconductor devices, directly influencing the switching time and driving loss in dynamic operating scenarios. It is a key factor in improving the operational efficiency of power devices. However, due to the fast switching speed, smaller Qg value, and the switching hysteresis effects of SiC power devices, it is challenging to ensure consistency, reliability, and repeatability in Qg measurement. To address the characteristics of SiC Qg, standards committee such as JEDEC JC70, have introduced new measurement standards. This paper begins with mainstream methods for Qg measurement, shows the advantages and disadvantages of different methods and interprets the key points and measurement tips in Qg measurement. By comparing the new JEP192 and legacy standards, this paper shows the differences and matters need attention. Finally, based on extensive comparative testing and data analysis using Keysight Technologies' dynamic parameter (DPT) tester and static parameter tester, the paper demonstrates how to measure gate charge more accurately and efficiently.