DC MOSFET Characterization at the Wafer Level

DC MOSFET Characterization at the Wafer Level

應用說明

Nanoscale devices require both lower signal levels and lower power levels for proper operation. In order to characterize these devices and the semiconductor processes on which they are made, it is essential to be able to make accurate low-level current measurements. The Keysight Technologies, Inc. B1500A Semiconductor Device Analyzer meets this need by supporting current measurements in the sub fA range. This application note will explain how to evaluate MOSFET subthreshold characteristics precisely using the B1500A’s ultra low current measurement capabilities.

 

Low-current measurement challenges

 

Accurate low current on-wafer measurements face many challenges that can potentially degrade measurement quality including:

  • Leakage currents and electrical noise created by the measurement cables and the interface between the measurement instrument and the wafer prober
  • Leakage currents and electrical noise on the interconnect wires and probe needles in the prober caused by insufficient guarding
  • Photoelectric effects arising from failure to completely shield the wafer from ambient light